Product overview
- Product number
- BUK9C1R3-40EJ
- Manufacturer
- NXP Semiconductors
- product description
- MOSFET N-CH 40V 190A D2PAK-7
Documents and media
- Datasheets
- BUK9C1R3-40EJ
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 190A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -
- Package / Case :
- TO-263-7, D²Pak (6 Leads + Tab)
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- 1.3mOhm @ 90A, 5V
- Supplier Device Package :
- D2PAK-7
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- -
- Vgs(th) (Max) @ Id :
- -
product description
MOSFET N-CH 40V 190A D2PAK-7
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