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Product overview

Product number
BUK9C1R3-40EJ
Manufacturer
NXP Semiconductors
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 40V 190A D2PAK-7

Documents and media

Datasheets
BUK9C1R3-40EJ

Product Details

Current - Continuous Drain (Id) @ 25°C :
190A (Tc)
Drain to Source Voltage (Vdss) :
40 V
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-
Package / Case :
TO-263-7, D²Pak (6 Leads + Tab)
Part Status :
Active
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
1.3mOhm @ 90A, 5V
Supplier Device Package :
D2PAK-7
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
-
Vgs(th) (Max) @ Id :
-

product description

MOSFET N-CH 40V 190A D2PAK-7

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