Datasheets

SI2335DS-T1-E3

Current - Continuous Drain (Id) @ 25°C :

3.2A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1225 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Obsolete

Power Dissipation (Max) :

750mW (Ta)

Rds On (Max) @ Id, Vgs :

51mOhm @ 4A, 4.5V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

450mV @ 250µA (Min)