Datasheets

GT55N06D5

Current - Continuous Drain (Id) @ 25°C :

53A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1988 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

70W (Ta)

Rds On (Max) @ Id, Vgs :

9mOhm @ 14A, 10V

Supplier Device Package :

8-DFN (4.9x5.75)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA