Datasheets

FQI4N20

Current - Continuous Drain (Id) @ 25°C :

3.6A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

220 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Part Status :

Active

Power Dissipation (Max) :

3.13W (Ta), 45W (Tc)

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 1.8A, 10V

Supplier Device Package :

I2PAK (TO-262)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA