Product overview
- Product number
- IAUC120N04S6L012ATMA1
- Manufacturer
- Infineon Technologies
- product description
- IAUC120N04S6L012ATMA1
Documents and media
- Datasheets
- IAUC120N04S6L012ATMA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 120A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4832 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 115W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.21mOhm @ 60A, 10V
- Supplier Device Package :
- PG-TDSON-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2V @ 60µA
product description
IAUC120N04S6L012ATMA1
