Datasheets

IAUC120N04S6N013ATMA1

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

7V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

68 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4260 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

115W (Tc)

Rds On (Max) @ Id, Vgs :

1.34mOhm @ 60A, 10V

Supplier Device Package :

PG-TDSON-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 60µA