Product overview
- Product number
- TRS8E65C,S1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE SCHOTTKY 650V 8A TO220-2L
Documents and media
- Datasheets
- TRS8E65C,S1Q
Product Details
- Capacitance @ Vr, F :
- 44pF @ 650V, 1MHz
- Current - Average Rectified (Io) :
- 8A (DC)
- Current - Reverse Leakage @ Vr :
- 90 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- TO-220-2
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-220-2L
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 8 A
product description
DIODE SCHOTTKY 650V 8A TO220-2L
