Datasheets

C3D1P7060Q

Capacitance @ Vr, F :

100pF @ 0V, 1MHz

Current - Average Rectified (Io) :

9.7A (DC)

Current - Reverse Leakage @ Vr :

50 µA @ 600 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 160°C

Package / Case :

10-PowerTQFN

Part Status :

Obsolete

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

10-Power QFN (3.3x3.3)

Voltage - DC Reverse (Vr) (Max) :

600 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 1.7 A